features ? high output power: 21.0 dbm typical p 1 db at 2.0 ghz 20.5 dbm typical p 1 db at 4.0 ghz ? high gain at 1 db compression: 14.0 db typical g 1 db at 2.0 ghz 9.5 db typical g 1 db at 4.0 ghz ? low noise fgure: 1.9 db typical nf o at 2.0 ghz ? high gain-bandwidth product: 8.0 ghz typical f t ? cost efective ceramic microstrip package 36 micro-x package description avagos at-42036 is a general purpose npn bipolar tran - sistor that ofers excellent high frequency performance. the at - 42036 is housed in a cost efective surface mount 100 mil micro-x package. the 4 micron emitter-to-emitter pitch enables this transistor to be used in many diferent functions. the 20 emitter fnger interdigitated geometry yields a medium sized transistor with impedances that are easy to match for low noise and medium power ap - plications. this device is designed for use in low noise, wideband amplifer, mixer and oscillator applications in the vhf, uhf, and microwave frequencies. an optimum noise match near 50 ? up to 1 ghz, makes this device easy to use as a low noise amplifer. the at-42036 bipolar transistor is fabricated using avagos 10 ghz f t self-aligned-transistor (sat) process. the die is nitride passivated for surface protection. excellent device uniformity, performance and reliabil - ity are produced by the use of ion-implantation, self- alignment techniques, and gold metalization in the fabri - cation of this device. at-42036 up to 6 ghz medium power silicon bipolar transistor data sheet
2 at-42036 absolute maximum ratings [1] symbol parameter units absolute maximum v ebo emitter-base voltage v 1.5 v cbo collector-base voltage v 20 v ceo collector-emitter voltage v 12 i c collector current ma 80 p t power dissipation [2,3] mw 600 t j junction temperature c 150 t stg storage temperature [4] c -65 to 150 thermal resistance [2,5] : jc = 175c/w notes: 1. permanent damage may occur if any of these limits are exceeded. 2. t case = 25c. 3. derate at 5.7 mw/c for t c > 95c. 4. storage above +150c may tarnish the leads of this package making it difcult to solder into a circuit. 5. the small spot size of this technique results in a higher, though more accurate determination of jc than do alternate methods. see measurements section thermal resistance for more information. electrical specifcations t a = 25c symbol parameters and test conditions [1] frequency units min. typ. max. |s 21e | 2 insertion power gain; v ce = 8 v, i c = 35 ma f = 2.0 ghz db 10.0 11.0 f = 4.0 ghz 5.0 p 1 db power output @ 1 db gain compression f = 2.0 ghz dbm 21.0 v ce = 8 v, i c = 35 ma f = 4.0 ghz 20.5 g 1 db 1 db compressed gain; v ce = 8 v, i c = 35 ma f = 2.0 ghz db 14.0 f = 4.0 ghz 9.5 nf o optimum noise figure: v ce = 8 v, i c = 10 ma f = 2.0 ghz db 2.0 f = 4.0 ghz 3.0 g a gain @ nf o ; v ce = 8 v, i c = 10 ma f = 2.0 ghz db 13.5 f = 4.0 ghz 10.0 f t gain bandwidth product: v ce = 8 v, i c = 35 ma ghz 8.0 h fe forward current transfer ratio; v ce = 8 v, i c = 35 ma 30 150 270 i cbo collector cutof current; v cb = 8 v a 0.2 i ebo emitter cutof current; v eb = 1 v a 2.0 c cb collector base capacitance [1] : v cb = 8 v, f = 1 mhz pf 0.28 note: 1. for this test, the emitter is grounded.
3 at-42036 typical performance, t a = 25c frequency (ghz) figure 4. insertion power gain, maximum available gain and maximum stable gain vs. frequency. v ce = 8 v, i c = 35 ma. gain (db) 0.1 0.5 0.3 1.0 3.0 6.0 i c (ma) figure 2. output power and 1 db compressed gain vs. collector current and frequency. v ce = 8 v . 24 20 16 12 8 4 g 1 db (db) p 1 db (dbm) 0 1 0 2 0 3 0 4 0 5 0 p 1d b g 1d b 2.0 ghz 2.0 ghz 4.0 ghz 4.0 ghz 40 35 30 25 20 15 10 5 0 ms g ma g | s 21e | 2 i c (ma) figure 1. insertion power gain vs. collector current and frequency. v ce = 8 v . 20 16 12 8 4 0 | s 21e | 2 gain (db) 0 1 0 2 0 3 0 4 0 5 0 1.0 ghz 2.0 ghz 4.0 ghz i c (ma) figure 3. output power and 1 db compressed gain vs. collector current and voltage. f = 2.0 ghz. 10 v 4 v 6 v 4 v 10 v 6 v 24 20 16 12 16 14 12 10 g 1 db (db) p 1 db (dbm) 0 1 0 2 0 3 0 4 0 5 0 p 1d b g 1d b frequency (ghz) figure 5. noise figure and associated gain vs. frequency. v ce = 8 v, i c = 10 ma. gain (db) 24 21 18 15 12 9 6 3 0 4 3 2 1 0 nf o (db) 0.5 2.0 1.0 3.0 4.0 5.0 g a nf o
4 at-42036 typical scattering parameters, common emitter, z o = 50 , t a = 25c, v ce = 8 v, i c = 10 ma freq. s 11 s 11 s 21 s 21 s 21 s 12 s 12 s 12 s 22 s 22 ghz mag. ang. db mag. ang. db mag. ang. mag. ang. 0.1 .72 -46 28.3 26.09 152 -37.0 .014 73 .92 -14 0.5 .59 -137 20.9 11.13 102 -31.0 .028 44 .58 -27 1.0 .56 -171 15.4 5.91 80 -28.2 .039 47 .51 -29 1.5 .56 169 12.1 4.03 67 -26.6 .047 52 .50 -33 2.0 .58 155 9.7 3.06 55 -24.2 .062 55 .48 -38 2.5 .59 147 8.0 2.50 48 -22.6 .074 61 .47 -42 3.0 .61 137 6.5 2.10 38 -20.8 .092 65 .46 -51 3.5 .63 128 5.2 1.82 27 -19.6 .105 62 .47 -63 4.0 .63 117 4.0 1.60 17 -18.0 .126 57 .49 -72 4.5 .63 106 3.1 1.43 7 -16.5 .149 53 .51 -80 5.0 .64 93 2.3 1.30 -3 -15.4 .169 48 .52 -87 5.5 .67 79 1.5 1.19 -13 -14.3 .193 41 .51 -94 6.0 .72 70 0.6 1.07 -23 -13.4 .215 35 .46 -105 at-42036 typical scattering parameters, common emitter, z o = 50 , t a = 25c, v ce = 8 v, i c = 35 ma freq. s 11 s 11 s 21 s 21 s 21 s 12 s 12 s 12 s 22 s 22 ghz mag. ang. db mag. ang. db mag. ang. mag. ang. 0.1 .50 -88 33.2 45.64 135 -42.0 .008 68 .77 -22 0.5 .52 -164 22.4 13.24 92 -32.8 .023 57 .45 -25 1.0 .53 174 16.6 6.75 76 -28.2 .039 63 .42 -26 1.5 .53 160 13.1 4.55 64 -25.6 .053 66 .41 -30 2.0 .55 148 10.8 3.45 53 -23.2 .069 65 .41 -36 2.5 .57 142 9.0 2.81 47 -21.6 .084 67 .39 -40 3.0 .59 134 7.5 2.37 37 -20.0 .101 64 .38 -49 3.5 .60 125 6.3 2.06 27 -18.4 .120 61 .39 -61 4.0 .60 116 5.2 1.81 17 -17.0 .141 57 .41 -71 4.5 .60 104 4.2 1.62 7 -16.0 .158 50 .43 -78 5.0 .61 92 3.4 1.47 -2 -14.9 .179 45 .44 -84 5.5 .64 79 2.6 1.35 -13 -14.1 .198 37 .43 -91 6.0 .69 70 1.7 1.21 -23 -13.2 .219 30 .38 -102 a model for this device is available in the device models section. at-42036 noise parameters, v ce = 8 v, i c = 10 ma freq. nf o opt opt ghz db mag ang r n /50 0.1 1.0 .04 10 0.13 0.5 1.1 .04 66 0.12 1.0 1.3 .07 150 0.12 2.0 2.0 .20 -178 0.12 4.0 3.0 .51 -110 0.36
for product information and a complete list of distributors, please go to our web site: www.avagotech.com avago, avago technologies, and the a logo are trademarks of avago technologies, limited in the united states and other countries. data subject to change. copyright ? 2007 avago technologies limited. all rights reserved. obsoletes 5989-2653en av02-0300en - may 29, 2007 36 micro-x package dimensions tape dimensions device orientation ordering information part numbers no. of devices comments at-42036-blkg 100 bulk AT-42036-TR1G 1000 7" reel 420 1 3 4 2 emitter emitter collector base 2.15 (0.085) 2.11 (0.083) dia . 0.508 (0.020) 2.54 (0.100) 4.57 ? 0.2 5 0.180 ? 0.010 0.15 ? 0.0 5 (0.006 ? 0.002) notes: 1. dimensions are in millimeters (inches) 2. tolerances: in .xxx = ? 0.005 mm .xx = ? 0.1 3 0.56 (0.022) 1.45 ? 0.2 5 (0.057 ? 0.010) 12 m m 1 top view 1 indicates pin 1 orientation. 420 420 420 a b t c w f e p 2 10 pitches cumulative tolerance on tape ? 0.2 mm user feed direction p 0 d 0 cover tape t p 1 d 1 k description symbol size (mm) size (inches) length width depth pitch bottom hole diameter a b k p 1 d 1 5.77 ? 0.10 6.10 ? 0.10 1.70 ? 0.10 8.00 ? 0.10 1.50 min. 0.227 ? 0.004 0.240 ? 0.004 0.067 ? 0.004 0.314 ? 0.004 0.059 min. cavity diameter pitch position d 0 p 0 e 1.50 + 0.10/-0.05 4.00 ? 0.10 1.75 ? 0.10 0.059 + 0.004/-0.002 0.157 ? 0.004 0.069 ? 0.004 perforation width thickness w t 12.00 ? 0.20 0.30 ? 0.05 0.472 ? 0.008 0.012 ? 0.002 carrier tape cavity to perforation (width direction) cavity to perforation (length direction) f p 2 5.50 ? 0.05 2.00 ? 0.05 0.217 ? 0.002 0.079 ? 0.002 distance between centerline width tape thickness c t 9.30 ? 0.10 0.065 ? 0.010 0.366 ? 0.004 0.0026 ? 0.0004 cover tape
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